我們的MBE-10可以成長(zhǎng)四寸～六寸的樣品，樣品溫度可以加到900攝氏度，如果是兩寸以下的樣品可以到1100攝氏度。可以裝置10個(gè)束源爐，最大容量40cc。配備晶振、束流監(jiān)控器、高能電子槍以及監(jiān)控軟件。可以裝置固體源、氣體源/ ALD閥、等離子增強(qiáng)型束源爐（plasma cell)及我們特制的電子回旋共振束源爐(ECR plasma cell)?？裳b電子槍E-beam。
我們的腔體是用SUS316不銹鋼制作，真空可到2×10-10torr，使用泵有浦發(fā)700分子泵與冷泵。內(nèi)部有全罩式液態(tài)氮冷罩，可提供非常大的抽氣效率。我們的設(shè)備在長(zhǎng)二維材料以及拓?fù)洳牧稀⒀趸锓矫娑加胁诲e(cuò)的性能。如：III-V 族, II-VI 族, Si/SiGe ,金屬與金屬氧化物（因?yàn)槲覀冇歇?dú)步全球的激光加熱器，可到2英寸），以及GaN, AlN, AlGaN, InGaN, AlGaInN,CIGS，OLED 等。
AdNaNoTek's s Molecular Beam Epitaxy (MBE - 10) can deposit large-scale and atomic layer by layer thin-film with extremely high quality and a great repeatability. The MBE system is designed to maintain UHV (E-10 torr) condition to ensure contamination-free epitaxial deposition. This UHV condition is attained by the use of UHV-compatible chamber material, high performance vacuum pumps, and the use of specially designed cryopanel. AdNaNoTek uses SS316L stainless steel material (at least 18% chromium and 8% nickel) for the chamber. This material is doped with molybdenum that greatly reduce the formation of chromium carbide which makes it more resistant to oxidation. The chamber is also fully covered with liquid nitrogen cryopanel which condenses water and hydrocarbons to reduce contamination the epitaxial deposition. The cryopanel also thermally isolates each effusion cells, hence reducing the possibility of cross contamination between evaporator cells.In addition, precise control and high stability is achieved by making the process automated with the use of the FBBEAR control software. The FBBEAR control software, provides complete data logging, precise parameter tuning which allows user to have easy operation and reliable experimental repeatability.MBE can be applied for thin layer deposition of materials like: III-V semiconductors, II-VI semiconductors, Si/SiGe heterostructures, metals, metal oxides, metal nitrides (GaN, AlN, AlGaN, InGaN, AlGaInN, etc.), magnetic materials, topological insulators (e.g. Bi2Se3), 2D nanomaterials, nanowire materials, solar cell materials (CIGS), organic materials (OLED and organic solar cells), etc.
MAIN SPECIFICATIONS:
ADVANTAGES OF MOLECULAR BEAM EPITAXY
AdNaNotek’s liquid nitrogen cryopanel can provide extremely large pumping speed by condensing gases, particularly water and heavy hydrocarbons, unto the surface of the cryopanel. Furthermore, it can thermally isolate each effusion cells, and maintain the heat localized in each one of them.
The fully covered cryopanel provide very large capacity for liquid nitrogen (more than 20000 mL).
用戶使用MBE-10發(fā)表的文章
Y. Tung, Y. F. Chiang, C. W. Chong, Z. X. Deng, Y. C. Chen, J. C. A. Huang, C.-M. Cheng, T.-W. Pi, K.-D. Tsuei, Z. Li, H. Qiu “Growth and characterization of molecular beam epitaxy-grown Bi2Te3-xSex topological insulator alloys” J. Appl. Phys. 119, 055303 (2016) (SCI).
Shun-Yu Huang, Cheong-Wei Chong, Yi Tung, Tzu-Chin Chen, Ki-Chi Wu, Min-Kai Lee, Jung-Chun-Andrew Huang, Z. Li “Proximity Effect induced transport Properties between MBE grown (Bi1?xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4.” Sci Rep. 7: 2422 (2017).
Shu Hsuan Su, Pei Yu Chuang, Sheng Wen Chen, Hsin Yu Chen, Yi Tung, Wei-Chuan Chen, Chia-Hsin Wang, Yaw-Wen Yang, Jung Chun Andrew Huang, Tay-Rong Chang, Hsin Lin, Horng-Tay Jeng, Cheng-Maw Cheng, Ku-Ding Tsuei, Hai Lin Su, Yu Cheng Wu “Selective Hydrogen Etching Leads to 2D Bi(111) Bilayers on Bi2Se3: Large Rashba Splitting in Topological Insulator Heterostructure” Chemistry of Materials 29, 8992-9000 (2017).
Chien-Ming Tu*, Yi-Cheng Chen, Ping Huang, Pei-Yu Chuang, Ming-Yu Lin, Cheng-Maw Cheng, Jiunn-Yuan Lin, Jenh-Yih Juang, Kaung-Hsiung Wu, Jung-Chun A. Huang*, Way-Faung Pong, Takayoshi Kobayashi, Chih-Wei Luo* “Helicity-dependent terahertz emission spectroscopy of topological insulator Sb2Te3 thin films” Phys. Rev. B 96, 195407 (2017).
Y. Tung, C. W. Chong*, C. W. Liao, C. H. Chang, S. Y. Huang, P. Y. Chuang, M. K. Lee, C. M. Cheng, Y. C. Li, C. P. Liu, J. C. A. Huang* “Tuning the transport and magnetism in a Cr–Bi2Se3 topological insulator by Sb doping” RSC Adv.7, 47789-47795 (2017).
Pei-Yu Chuang, Shu-Hsuan Su*, Cheong-Wei Chong, Yi-Fan Chen, Yu-Heng Chou, Jung-Chun-Andrew Huang*, Wei-Chuan Chen, Cheng-Maw Cheng*, Ku-Ding Tsuei, Chia-Hsin Wang, Yaw-Wen Yang, Yen-Fa Liao, Shih-Chang Weng, Jyh-Fu Lee, Yi-Kang Lan, Shen-Lin Chang, Chi-Hsuan Lee, Chih-Kai Yang, Hai-Lin Su, Yu-Cheng Wu “Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator” RSC Adv. 8, 423-428 (2018).
F.‐X. Liang, L. Liang, X.‐Y. Zhao, L.‐B. Luo, Y.‐H. Liu, X.‐W. Tong, Z.‐X. Zhang, J. C. Andrew Huang*, “A Sensitive Broadband (UV–vis–NIR) Perovskite Photodetector Using Topological Insulator as Electrodes.” Adv. Optical Mater. 7, 1801392 (2018).
Shu Hsuan Su, Pei-Yu Chuang, Jung-Chuan Lee, Cheong-Wei Chong, Ya Wen Li, Zong Mou Lin, Yi-Chun Chen, Cheng-Maw Cheng*, and Jung-Chun-Andrew Huang* “Spin-to-Charge Conversion Manipulated by Fine-Tuning the Fermi Level of Topological Insulator (Bi1–xSbx)2Te3.” ACS Appl. Electron. Mater. 2021, 3, 2988-2994.